Documentation on Settings
These explanations are not written by me, they are combined from different pages at Award's web site, http://www.award.com/docs/docs0.htm.
A good source for more information on the settings in TweakBIOS is Wim's BIOS Page.
Note that all of these settings not available for every chipset!

Check out The BIOS Companion!

DRAM Read Burst

Set the timing for burst-mode reads from DRAM. The lower the timing numbers, the faster the system addresses memory. Selecting timing numbers lower than the installed DRAM is able to support can result in memory errors.

DRAM Write Burst

Set the timing for burst-mode writes from DRAM. The lower the timing numbers, the faster the system addresses memory. Selecting timing numbers lower than the installed DRAM is able to support can result in memory errors.

DRAM R/W Leadoff Timing

Select the combination of CPU clocks the DRAM on your board requires before each read from or write to the memory. Changing the value from the setting determined by the board designer for the installed DRAM may cause memory errors.

DRAM Fast Leadoff

Select Enabled to shorten the leadoff cycles and optimize performance.

Fast EDO Leadoff

Select Enabled only for EDO DRAMs in either a synchronous cache or a cacheless system. It causes a 1-HCLK pull-in for all read leadoff latencies for EDO DRAMs (i.e., page hits, page misses, and row misses). Select Disabled if any of the DRAM rows are populated with FPM DRAMs.

Turbo Read Leadoff

Select Enabled to shorten the leadoff cycles and optimize performance in cacheless, 50-60 MHz, or one-bank EDO DRAM systems.

DRAM Speculative Leadoff

A read request from the CPU to the DRAM controller includes the memory address of the desired data. When Enabled, Speculative Leadoff lets the DRAM controller pass the read command to memory slightly before it has fully decoded the address, thus speeding up the read process.

Fast EDO Path Select

When Enabled, a fast path is selected for CPU-to-DRAM read cycles for the leadoff, providing the system contains EDO DRAMs. It causes a 1-HCLK pull-in for all read leadoff latencies (i.e., page hits, page misses, and row misses).

Turn-Around Insertion

When Enabled, the chipset inserts one extra clock to the turn-around of back-to-back DRAM cycles.

DRAM RAS# Precharge Time

The precharge time is the number of cycles it takes for the RAS to accumulate its charge before DRAM refresh. If insufficient time is allowed, refresh may be incomplete and the DRAM may fail to retain data.

Fast MA to RAS# Delay

The values in this field are set by the system board designer, depending on the DRAM installed. Do not change the values in this field unless you change specifications of the installed DRAM or the installed CPU.

MA Additional Wait State

Selecting Enabled inserts an additional wait state before the beginning of a memory read. The setting of this parameter depends on the board design. Do not change from the manufacturer's default unless you are getting memory addressing errors.

RAS# to CAS# Delay

This field lets you insert a timing delay between the CAS and RAS strobe signals, used when DRAM is written to, read from, or refreshed. Disabled gives faster performance; and Enabled gives more stable performance.

DRAM Page Idle Timer

Select the amount of time in HCLKs that the DRAM controller waits to close a DRAM page after the CPU becomes idle.

DRAM Enhanced Paging

When Enabled, the chipset keeps the page open until a page/row miss. When Disabled, the chipset uses additional information to keep the DRAM page open when the host may be "right back."

SDRAM Speculative Read

The chipset can "speculate" on a DRAM read address, thus reducing read latencies. The CPU issues a read request containing the data memory address. The DRAM controller receives the request. When this field is Enabled, the controller issues the read command slightly before it has finished decoding the data address.

SDRAM (CAS Lat/RAS-to-CAS)

You can select a combination of CAS latency and RAS-to-CAS delay in HCLKs of 2/2 or 3/3. The system board designer should set the values in this field, depending on the DRAM installed. Do not change the values in this field unless you change specificat ions of the installed DRAM or the installed CPU.

Refresh RAS# Assertion

Select the number of clock ticks RAS# is asserted for refresh cycles.

DRAM Refresh Queue

Enabled permits queuing up to four DRAM refresh requests, so DRAM can refresh at optimal times. Disabled makes all refreshes priority requests. Installed DRAM must support this feature; most do.

DRAM RAS Only Refresh

An alternate to CAS-before-RAS refresh. Leave Disabled unless your DRAM requires this older method of refresh generation.

DRAM Refresh Rate

Select the period required to refresh the DRAMs, according to DRAM specifications.

Fast DRAM Refresh

The cache DRAM controller offers two refresh modes, Normal and Hidden. In both modes, CAS takes place before RAS but the Normal mode requires a CPU cycle for each. On the other hand, a cycle is eliminated by "hiding" the CAS refresh in Hidden mode. Not only is the Hidden mode faster and more efficient, but it also allows the CPU to maintain the status of the cache even if the system goes into a power management "suspend" mode.

Read-Around-Write

DRAM optimization feature: If a memory read is addressed to a location whose latest write is being held in a buffer before being written to memory, the read is satisfied through the buffer contents, and the read is not sent the DRAM.

PCI Burst Write Combine

When this option is Enabled, the chipset assembles long PCI bursts from the data held in these buffers.

PCI-To-DRAM Pipeline

DRAM optimization feature: If Enabled, full PCI-to-DRAM write pipelining is enabled. Buffers in the chipset store data written from the PCI bus to memory. When Disabled, PCI writes to DRAM are limited to a single transfer per write cycle.

CPU-To-PCI Write Post

When this field is Enabled, writes from the CPU to the PCI bus are buffered, to compensate for the speed differences between the CPU and the PCI bus. When Disabled, the writes are not buffered and the CPU must wait until the write is complete before st arting another write cycle.

CPU-To-PCI IDE Posting

Select Enabled to post write cycles from the CPU to the PCI IDE interface. IDE accesses are posted in the CPU to PCI buffers, for cycle optimization.

Peer Concurrency

Peer concurrency means that more than one PCI device can be active at a time.

Passive Release

When Enabled, CPU to PCI bus accesses are allowed during passive release. Otherwise, the arbiter only accepts another PCI master access to local DRAM.

Delayed Transaction

The chipset has an embedded 32-bit posted write buffer to support delay transactions cycles. Select Enabled to support compliance with PCI specification version 2.1.

Chipset Special Features

When disabled, the chipset behaves as if it were the earlier Intel 82430FX chipset.