n-MOSFET Device Simulation with Finite-Difference Method
Markus Yogi Prayoga, S.Si; Agus Kartono M,Si; Akhiruddin Maddu M,Si
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A MOSFET (Metal Oxide-Semiconductor Field Effect Transistor) device is the most important part of Very Large Scale Integrated Circuit (VLSI), especially for microprocessors and memory devices.

Research on MOSFET devices is being developed continuously to get much smaller devices and higher performance. In the integrated circuit such as microprocessor from the latest technology, there are two millions until nine millions of MOSFETs. So, computer and electronics technology are depend on MOSFET technology.

MOSFET is a four terminals device: drain, gate, source and base. This simulation modeled n-MOSFET (MOSFET with n-channel). The operation of this device is based on n-channel that formed in the p-type semiconductor substrate. n-MOSFET devices consist of p-type semiconductor substrate and two region of highly doped n-type semiconductor on source and drain contacts. Metal contact on oxide region is called gate contact. A middle part of this device is identical with MOS diode.

From this simulation, we get the potential distribution, electric field distribution and I-V characteristic. Finite-Difference method is used to simulate this device, from Poisson equations and semiconductor equations. This simulation result is very important part to design n-MOSFET in electronics industry.
This simulation conclude that to design a high performance of n-MOSFET, we have to concern a lot to many parameters, such as: electron doping concentration, hole doping concentration, channel length, and also biased voltage through devices in the operation. From all these parameters we can build n-MOSFET design with desired characteristic. Current leakage, current amplifying, and changes on depletion region also analyzed by this simulation.