• Lecturer,
  Department of Physics
  Faculty of Natural Sciences
  Jamia Millia Islamia (Central University)
  NEW DELHI 110025
  INDIA
  

  Number of Research Schlolars Presently Working: One
  
  

• Research Associate with Dr. D. K. Avasthi
  Materials Science Group
  Nuclear Science Centre
  NEW DELHI 110067
  INDIA
  

• Extended SRF/Research Associate with Prof. Anand P Pathak
  School of Physics
  University of Hyderabad
  Hyderabad, India.
  

• Senior Research Fellow (SRF)
  Council for Scientific and Industrial Research (CSIR)
  INDIA
  

• Junior Research Fellow (JRF)
  Inter University Consortium for DAE Facilities
  School of Physics
  University of Hyderabad
  Hyderabad, India.
  

Enthusiastic about using New Technologies as teaching aids. To this end: preparing the required Lecture Notes and the Question Banks, for posting at the Campus Computer Network.

Secondary School Certificate

1983, High School
Andhra Pradesh Board of Secondary Education, Hyderabad.

Intermediate

1985, Andhra Pradesh Board of Intermediate Education, Hyderabad.

B.Sc Honours (Physics)

1988, Bhartiya Vidya Bhavan's New Science College,
Osmania University Hyderabad

M.Sc (Physics)

1991, Aligarh Muslim University, ALIGARH
Department of Physics

M.Phil (Physics)

1993, School of Physics
University of Hyderabad, Hyderabad,

M.Phil Thesis Supervisor: Professor Anand P Pathak

Title of the M.Phil Thesis: Pion-Muon Channeling in Crystals with Imperfections

Ph.D (Physics)

2000, School of Physics
University of Hyderabad, Hyderabad,

PhD Thesis Supervisor: Professor Anand P Pathak

Title of the PhD Thesis: Effects of Defects and Strain on Ion Channeling in Solids

Description of Ph.D Research
The Doctoral thesis comprised of two components: theoretical part as well as experimental part. The theory work was on interatomic potentials and derivation of dechanneling cross-section of channeled particles in crsytals with point defects. The experimental part consisted of growth and characterization of Strained Layer Superlattices by Ion Channeling, High Resolution XRD and Raman Spectroscopy (experimental). A series of In_0.1Ga_0.9As/GaAs multilayers have been grown at TIFR, Mumbai, in collaboration with Prof. B. M. Arora. The samples have been subsequently characterized at IoP Bhubaneswar, IIT Kanpur, IGCAR Kalpakkam and Alabama A & M University, Alabama, USA.

Course Work

The M.Phil course consisted of regular courses spread over two semesters and included:
Classical Mechanics, Quantum Mechanics and Statistical Mechanics.

Skills

Spoken and Written English: Proficient; used as the medium of instruction since kindergarten.

Computer Experience

Familiar with UNIX/LINUX, DOS, Fortran, LaTeX, Microsoft Word, Microsoft Excel, Power Point and Web-Designing.

One Year Post Graduate Diploma Course in Computer Science (PGDCS)
Centre for Distance Education
University of Hyderabad
(In Progress)

Ion-Solid Interaction
Characterization of Strained Layer Superlattices by Ion Scattering Techniques

Ion-Solid Interaction. The basic interest is in the Utilization of Accelerators for Materials Science Research. I have carried out a series of experiments to characterize Semiconductor Heterostructures using Rutherford Backscattering Spectrometry (RBS)/Channeling. The other characterization technique that has been used as complimentary to RBS/C is High Resolution X-Ray Diffraction, etc.

• Selected as category B speaker under the Theoretical Physics Seminar Circuit (TPSC) Program 1999-2000.
  

• Invited Lecture at the Young Physicists Colloquium (YPC 2001)
  Organized by: The Indian Physical Society (IPS)
  Saha Institute of Nuclear Physics
  Kolkata (Calcutta), 23 - 24 August 2001.
  

• Invited Lecture at the National Seminar on Physics of Materials, Department of Physics, University of Jammu, Jammu, November 23-24 2004.
  

• Vetted/Reviewed the Manuscripts Physics Textbooks for Class XI and XII (Urdu Version), organized by Department of Education in Science and Mathematics (DESM), National Council for Educational Research and Training (NCERT), New Delhi.
  

• Selected as a Resource Person for courses on Accelerator Physics, Semiconductor Devices, Solid State Physics and Thermodynamics in a Refresher Course organized by the Institute of Advance Studies in Education, Faculty of Education, Jamia Millia Islamia, New Delhi.
  

• 2000 Outstanding Scientists of the 21st Century
  Vol. 1 Edition 1, Page 341,
  International Biographical Centre, Cambirdge CB2 3QP England.
  

Ion channeling is widely used to study the defect densities and their location in crystalline materials; it also allows determination of the strain in epitaxial layered structures. A detailed knowledge of interatomic potentials for such channeled particles is needed for proper understanding and interpretation of various observations in the field of channeling. A model for the description of long-range electron-ion interactions affecting the potentials due to heavy impurities see by external probe particles in otherwise perfect crystals can be derived. The resulting formulation will envisage the modifications in the screening functions. Utilization of the ion channeling for characterizing synthetically modulated structures like semiconductor superlattices is another area of special interest. Strained Layer Superlattices (SLS) have unique electronic and opto-electronic properties and find wide ranging applications in many frontier areas of science and technology. These are layered structures of alternating composition of materials having lattice mismatch ((0.1% to 2.0%) which is accommodated by biaxial (compressive or tensile) strains in the plane of the layers; each layer acquires a perpendicular lattice constant due to strain accommodation. Beyond a critical thickness, the strain in the layers relaxes giving rise to misfit dislocations. The presence of defects deteriorates the performance of these devices and thus it is important to characterize strain and strain-relief mechanisms and also the limits of strained-layer growth in the structures. My thesis work is an effort to address these two problems and hence is divided into two parts;

1. Theoretical work on the interatomic potential for a positively charged particle channeled in a crystal with point defects.
   

2. Characterization of Strained-Layer Superlattices by Ion Channeling in comparison with other characterization techniques like XRD and Raman Spectroscopy. Samples for this experimental work are grown using the OMVPE facility at Tata Institute of Fundamental Research (TIFR), Mumbai, and studied at the Institute of Physics (IoP), Bhubaneswar, Indian Institute of Technology (IIT), Kanpur, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam and Alabama A & M University, Alabama, USA.
   

Initial part of my Ph.D. work consisted of a project Ion Beam Channeling Studies Using Accelerators of IGCAR, Kalpakkam sponsored by IUC-DAEF, Indore. In this project, I was assigned to carry out developmental work to set up the channeling facility at the Materials Science Division, IGCAR. A multi-port target chamber and its stand assembly to house the goniometer was designed fabricated, vacuum tested, coupled to the accelerator beamline and aligned axially with the beamline using a portable He-Ne laser. Quadrupole magnet and magnetic coils were introduced along the beamline to focus and deflect the beam. An alternate circuit was fabricated to control the movement of the goniometer from outside the vacuum; all the necessary electronics and controls were found to work satisfactorily. The resultant beam intensity was considered inadequate for Ion-Channeling studies and so it was decided to carry out these experiments at the IUC-DAE facility at IoP Bhubaneswar and IIT Kanpur.

An ion beam of a given fluence can cause intermixing of atomic layers at the interface, a phenomenon called Ion Beam Mixing which has long been recognized as an alternative to high dose ion implantation in various metal-insulator, metal-metal and metal-semiconductor alloys. Ion beam mixing can cause structural changes at the interface in SLS, resulting in a change in the band gap. With a controlled dosage band gap engineering or band gap tuning of the SLS can be achieved. Swift Heavy Ion beam induced mixing is more suitable for the integration of optoelectronic devices because of the advantage that interface mixing can be confined to a narrow region at the interface as against the lateral straggling effects in low energy ion irradiation. We wish to carry out high-energy ion irradiation on SLS and characterize the samples by photoluminescence (to see the variation in the band gap) and ion channeling and high resolution XRD for the strain measurements before and after the irradiation.

The basic thrust of this work viz. the growth, characterization and band gap tuning of SLS, is to utilize the advantages of unusual transport, optical and opto-electronic properties.

1. ..., Azher M. Siddiqui, ... (one of the 250+ Contributors, from 79 Institutions),
   GLD Detector Outline Document (GLD DOD),
   GLD: A Large Detector Concept study for International Linear Collider for TeV Physics
   Report of the
   GLD Concept Study Group,
   World Wide Study of Physics and Detectors for future Linear Electron-Positron Colliders, (March 2006).
   GLD: Gaseous tracker based Large Detector.
   LANL E-Print archive http://arXiv.org/abs/physics/0607154/.
   

2. ..., Azher Majid Siddiqui, ... (one of the 500+ Contributors, from 325 Institutions),
   International Linear Collider ILC Reference Design Report     (Four Volumes),
   
   • Volume-I: Executive Summary
     Editors: James Brau, Yasuhiro Okada and Nicholas Walker.
     
   • Volume-II: Physics at ILC
     Editors: Abdelhak Djouadi, Joseph Lykken, Klaus Mönig, Yasuhiro Okada, Mark Oreglia and Satoru Yamashita.
     
   • Volume-III: Accelerator
     Editors: Nan Phinney, Nobukasu Toge and Nicholas Walker.
     
   • Volume-IV: Detectors
     Editors: Ties Behnke, Chris Damerell, John Joros and Akiya Miyamoto.
     
   ILC Global Design Report and World Wide Study,
   ILC Global Design Effort (GDE), (August 2007).
   ILC: International Linear Collider.
   LANL E-Print archive http://arxiv.org/abs/0712.1950/.
   

• Azher M Siddiqui, S. Dhamodaran, S.V. S. Nageseswara Rao, N. Sathish and Anand P. Pathak,
  Ion Beam Modifications and Characterisation of Semiconductor Heterostructures,
  Proc. International Conf. on Adv. in Surface Treatment: Research & Applications (ASTRA),
  Ed. T.S. Sudershan, G. Sunderarajan, G. Totten and S.V. Joshi, 633-641, 2004.
  

1. Azher M Siddiqui, V Harikumar and A P Pathak,
   Double Screening Problem in Dechanneling by Point Defects,
   Physica Status Solidi B Vol 185, 77-85 (1994).
   

2. Azher M Siddiqui, V Harikumar, L N S Prakash Goteti and Anand P Pathak,
   Scattering of Pions and Channeled Muons by Impurities in Single Crystals,
   Modern Physics Letters B, Vol 10, 745-751 (1996).
   

3. Azher M Siddiqui, A. Kiran and Anand P. Pathak,
   Dechanneling by Ionized Point Defects in Solids: Double Screening Effects,
   Modern Physics Letters B, Vol. 11, 1231-1239 (1996).
   

4. Azher M Siddiqui, Anand P. Pathak, B. Sundarvel, Amal K. Das, K. Sekar, B. N. Dev and B. M. Arora,
   Lattice Strain Measurement of Strained In_0.1Ga_0.9As/GaAs heterostructures by RBS and Channeling,
   Nuclear Instruments and Methods in Physics Research (NIMS) B, 142, Issue 2,
   pp. 387-392 (July 1998).
   
   

5. Anand P. Pathak, L. N. S. Prakash Goteti and Azher M. Siddiqui,
   Quantum Models for Dechanneling by Point Defects and Extended Deffects,
   in Proceedings of the
   15th International Conference On The Application Of Accelerators In Research And Industry (CAARI-1998),
   (4 - 7 November 1998, Denton, Texas, USA),
   Editors: J L Duggan, I. L. Morgan,
   (American Institute of Physics (AIP) Conference Proceedings No. 475), pp. 765-768 (10 June 1999).
   

6. Anand P Pathak, S V S Nageshwara Rao and Azher M Siddiqui,
   Defects and strain studies in semiconductor multilayers,
   Nuclear Instruments and Methods in Physics Research (NIMS) B, 161-163, Issues 1-4,
   pp. 488-491 (March 2000).
   
   

7. Azher M. Siddiqui, S. V. S. Nageswara Rao, Anand P. Pathak, V. N. Kulkarni, R. Keshav Murthy,
   Eric Williams, Daryush Ila, Claudiu Muntele, K. S. Chandrasekaran and B. M. Arora,
   Ion channeling, high resolution x-ray diffraction and Raman spectroscopy in strained quantum wells,
   Journal of Applied Physics, Vol. 90, No. 6, pp. 2824-2830 (15 September 2001).
   

8. Azher M. Siddiqui, S. V. S. Nageswara Rao, and Anand P. Pathak,
   Strain measurements of semiconductor multilayers by ion channeling, high resolution XRD and Raman spectroscopy,
   in Proceedings of the
   Sixteenth International Conference On The Application Of Accelerators In Research And Industry (CAARI-2000),
   (1 - 5 November 2000, Denton, Texas, USA),
   Editors: Jerome L Duggan, I. Lon Morgan,
   (American Institute of Physics (AIP) Conference Proceedings No. 576), pp. 476-479 (12 July 2001).
   

9. Anand P. Pathak, Azher M Siddiqui, G. B. V. S. Lakshmi, S. V. S. Nageswara Rao, S. K. Srivastava, S. Ghosh,
   D. Bhattacharya, D. K. Avasthi, Dipak K. Goswami, P. Satyam and Bhupen N. Dev, A. Turos,
   Ion Beam Studies in Strained Layer Superlattices,
   Nuclear Instruments and Methods in Physics Research (NIMS) B, 193, Issues 1-4,
   pp. 319-323 (June 2002).
   

10. S.V.S. Nageswara Rao, D.K. Avasthi, E.T. Subramanyam, Kundan Singh, G.B.V.S. Lakshmi, S.A. Khan, Azher M Siddiqui, A. Tripathi, S.K. Srivastava, Sarvesh Kumar, T. Srinivasan, Umesh Tiwari, S.K. Mehta, R. Muralidharan, R.K. Jain and Anand P. Pathak,
    Automation of Channeling Experiment for Lattice Strain Measurements Using High Energy Ion Beams,
    in Proceedings of the
    Seventeenth International Conference On The Application Of Accelerators In Research And Industry (CAARI-2002),
    (12-16 November 2002, Denton, Texas, USA),
    Editors: Jerome L Duggan, I. Lon Morgan,
    (American Institute of Physics (AIP) Conference Proceedings No. 680), pp. 94-97 (2003).
    

11. Anand P. Pathak, S. V. S. Nageswara Rao, D.K. Avasthi, Azher M Siddiqui, S. K. Srivastava, F. Eichhorn, R. Groetzschel, N. Schell and A. Turos,
    Ion Beam Studies of Strains/Defects in Semiconductor Multilayers,
    in Proceedings of the
    Seventeenth International Conference On The Application Of Accelerators In Research And Industry (CAARI-2002),
    (12-16 November 2002, Denton, Texas, USA),
    Editors: Jerome L Duggan, I. Lon Morgan,
    (American Institute of Physics (AIP) Conference Proceedings No. 680), pp. 593-596 (2003).
    

12. A. Tripathi, S. A. Khan, S. K. Srivastava, M. Kumar, S. Kumar, S.V.S. Nageswara Rao, G. B. V. S. Laxmi, N. Bajwa, H.S. Nagaraja, Azher M. Siddiqui, V.K. Mittal, A. Szokefalvi, M. Kurth, A. C. Pandey, D. K. Avasthi, and H. D. Carstanjen,
    Electronic Sputtering from Semiconducting HOPG: A Study of Angular Dependence,
    Nuclear Instruments and Methods in Physics Research (NIMS) B, 212, Issues ???,
    pp. 402-406 (June 2003).
    

13. S. V. S. Nageswara Rao, Anand P. Pathak, Azher M. Siddiqui, D. K. Avasthi, Claudiu Muntele, Daryush Ila, B. N. Dev, R. Muralidharan, F. Eichhorn, R. Groetzschel and A. Turos,
    Ion Beam Characterization and Engineering of Strain in Semiconductor Multi-layers,
    Nuclear Instruments and Methods in Physics Research (NIMS) B, 212, Issues ???,
    pp. 442-450 (June 2003).
    

14. S. V. S. Nageswara Rao, A. K. Rajam, Anand P. Pathak, Azher M. Siddiqui, D. K. Avasthi, T. Srinivasan, Umesh Tiwari, S. K. Mehta, R. Muralidharan and R. K. Jain,
    Ion Beam Induced Modification of Lattice Strains in In_0.1Ga_0.9As/GaAs system,
    Nuclear Instruments and Methods in Physics Research (NIMS) B, 212, Issues ???,
    pp. 473-476 (June 2003).
    

15. S.V.S. Nageswara Rao, A. Kothari, G. B. V. S. Lakshmi, A. Tripathi, Azher M. Siddiqui, S. A. Khan, Anand P. Pathak and D.K. Avasthi,
    Development of a Large Area Two Dimensional Position Sensitive $Delta E - E$ Detector Telescope for Material Analysis,
    Nuclear Instruments and Methods in Physics Research (NIMS) B, 212, Issues ???,
    pp. 545-550 (June 2003).
    

16. M. Kumar, F. Singh, S.A. Khan, V. Baranwal, S. Kumar, D.C. Agarwal, Azher M. Siddiqui, A. Tripathi, A. Gupta, D.K. Avasthi, A.C. Pandey,
    Swift Heavy Ion Induced structural and optical modifications in LiF Thin Films,
    Journal of Physics (D): Appl. Phys., 38, 1-5, (2005).
    

17. S. Dhamodaran, N. Satish, A.P. Pathak, S.V.S.N. Rao, Azher M. Siddiqui, S.A. Khan, D.K.Avasthi, T. Srinivasan, R. Muralidharan, C. Muntele, D. Ila, and D. Emfietzoglou,
    Ion Beam Irradiation and Characterization of GaAs Based Hetero-structures,
    Nuclear Instruments and Methods in Physics Research (NIMS) B 242, 538-541, (2006).
    

18. G.B.V.S. Lakshmi, Vazid Ali, Pawan Kulriya, Azher M. Siddiqui, M. Husain and M. Zulfequar,
    Electrical and spectroscopic Characterization of p-toluene sulphonic acid doped poly (o-toluidine) and poly (o-toluidine) blends,
    Physica B 392, 259-265, (2007).
    

19. G.B.V.S. Lakshmi, Vazid Ali, Azher M. Siddiqui, Pawan Kulriya and M. Zulfequar,
    Optical Studies of SHI Irradiated Poly (o-Toluidine) – PVC blends,
    Eur. Phys. Jour. Appl. Phys., Vol. 39, No. 3, 251-256, (2008).
    

20. G.B.V.S. Lakshmi, Vazid Ali, Azher M. Siddiqui, Pawan Kulriya, M. Husain and M. Zulfequar,
    60 MeV C⁵⁺ ion irradiation effects on conducting poly (o-toluidine)-poly vinyl chloride blend films,
    Rad. Eff. & Defects in Solids, Vol. 163, Issue 2, 127 – 134, (2008).
    

21. G. B. V. S. Lakshmi, Azher M. Siddiqui, Vazid Ali, Pawan K Kulriya and M. Zulfequar,
    Effects of 60 MeV C⁵⁺ ion irradiation on PmT–PVC and p-TSA doped PoT–PVC blends,
    Nucl. Inst. and Meth.(B), 266, 1685–1691, (2008).
    

22. G.B.V.S. Lakshmi, Vazid Ali, Azher M. Siddiqui, Pawan Kulriya, M. Husain and M. Zulfequar,
    60 MeV C⁵⁺ ion irradiation effects on conducting poly (o-toluidine)-poly vinyl chloride blend films,
    Rad. Eff. & Defects in Solids.
    (Communicated).
    

23. G. B. V. S. Lakshmi, Vazid Ali, Azher M. Siddiqui and M. Zulfequar,
    Optical characterization of poly(o-toluidine) and PoT-PVC blends,
    Macromolecular Symposia.
    (Communicated).
    

24. G. B. V. S. Lakshmi, Anju Dhillon, Azher M. Siddiqui, M. Zulfequar and D. K. Avasthi,
    RF-Plasma Polymerization and characterization of Polyaniline,
    European Polymer Journal.
    (Communicated).
    

25. 
    

1. D. K. Sarkar, S. Choudhary, Azher M. Siddiqui, S. K. Sinha, P. Magudapathy, K. Sekar,
   K. G. M. Nair, S. Panchapakesan, N. S. Thampi and K. Krishan,
   Ion beam mixing in Au/Si system by Nitrogen ions,
   in Proceedings of the
   Emerging trends of thin films Technology and device fabrication, 27-29 November 1995,
   Cochin University of Science and Techonlogy, Cochin, India,
   Editors: ???, ??? pp. ???-??? (199?)
   

2. S. K. Sinha, D. C. Kothari, P. Magudapathy, S. Panchapakesan, A. M. Siddiqui and K. G. M. Nair,
   Development of RBS facility with 2MV Tandem Van de Graff acceleratore at IGCAR, Kalpakkam,
   in Proceedings of the
   4th National Seminar on Physics and Technology of Particle Accelerators and their Applications, PATPAA-96,
   IUC-DAEF Kolkata (Calcutta) Centre, India, 26 - 29 November 1996
   Editor: S. N. Chintalapudi IUC-DAEF Kolkata (Calcutta), pp. ???-??? .
   

3. Azher M Siddiqui, and Anand P. Pathak,
   Catastrophic Dechanneling Resonance Study Of In_0.1Ga_0.9As/GaAs Multilayers,
   ICTP Preprint IC/98/168.
   
   

4. Azher M. Siddiqui, V. N. Kulkarni, Anand P. Pathak and B. M. Arora,
   Characterization of OMVPE Grown Strained-Layer Supelattices by Ion Channeling,
   ICTP Preprint IC/98/169.
   

5. Anand P. Pathak, L. N. S. Prakash Goteti and Azher M. Siddiqui,
   Quantum Models for Dechanneling by Point Defects and Extended Deffects,
   ICTP Preprint IC/98/170.
   

6. S. V. S. Nageswara Rao, G. B. V. S. Lakshmi, Azher M. Siddiqui, S. Ghosh, S. K. Srivastava, D. K. Avasthi, R. K. Jain, F. Eichhorn and Anand P. Pathak,
   Swift Heavy Ion Mixing in In_0.12Ga_0.88As/GaAs Strained Layer Superlattice in Proceedings of the
   44th DAE Solid State Physics Symposium (DAE SSPS'2001)
   Bhabha Atomic Research Centre (BARC) Mumbai (Bombay), 26-30 December 2001
   Editors: S.L. Chaplot, P.S.R. Krishna and T. Shakuntala, Conference Proceedings No. 44, 505-506 (2001).
   

7. G.B.V.S. Lakshmi, Vazid Ali, Azher M. Siddiqui, and M. Zulfequar,
   XRD And FTIR Studies Of P-Toluine Sulphonic Acid Doped Poly (M-Toluidine) And Poly(M-Toluidine)-PVC Blends,
   The 2nd International Conference on Electroactive Polymers, February 19-24, 2007, Goa, India.
   

8. G. B. V. S. Lakshmi, Vazid Ali, Azher M. Siddiqui, P. K. Kulriya and M. Zulfequar,
   Effects Of 60 Mev C5+ Ion Irradiation On PMT-PVC Blends,
   The 18th International Conference on Ion Beam Analysis, 23rd-28th September 2007, University of Hyderabad, Hyderabad, India.
   

9. G. B. V. S. Lakshmi, Vazid Ali, Azher M. Siddiqui, P. K. Kulriya, Azher M. Siddiqui and M. Zulfequar,
   SHI Irradiation Effects On p-Toluene Sulphonic Acid Doped Poly (O-Toluidine) -PVC Blends,
   The 18th International Conference on Ion Beam Analysis, 23rd-28th September 2007, University of Hyderabad, Hyderabad, India.
   

10. Azher M. Siddiqui,
    
    

1. Anand P. Pathak, Azher M. Siddiqui, L. N. S. Prakash Goteti and V. Harikumar,
   Channeling and Channeling Radiation in Semiconductor Superlattices,
   in Semiconductor Materials and Devices,
   Editors: O. P. Agnihotri and V. K. Jain
   (Narosa Publishing House, New Delhi), pp. 241-258 (1998).
   

2. Azher M. Siddiqui and Anand P. Pathak,
   Ion Channeling in Semiconductor Superlattices,
   in Condensed Matter Physics,
   Editors: Bal Krishna Agrawal and Hari Prakash,
   (Narosa Publishing House, New Delhi), pp. 89-94 (1999).
   

3. Azher M. Siddiqui,
   Effects of Defects and Strain on Ion Channeling,
   Physics Teachers, 43, S35 (2001).
   (Refereed Proccedings of the Young Physicists' Colloquium (YPC'2001),
   Saha Institute of Nuclear Physics, Kolkatta, 23-24 August 2001).

4. Anand P. Pathak, S.V.S. Nageswara Rao, Azher M. Siddiqui, L.N.S. Prakash Goteti and G.B.V.S. Lakshmi,
   Theory of Charged Particle Probes to Modern Advanced Materials,
   in Accelerator Based Research in Basic and Applied Sciences
   Editors: Amit Roy and D.K. Avasthi,
   Phoenix Publishing House Pvt. Ltd. , New Delhi, pp. 173-184, 2002.
   

• Azher M. Siddiqui and Sameen Ahmed Khan,
  Ion Beam Channeling and Accelerator Programmes in India,
  MRSI Newsletter, Vol. B 02, Number 4, pp. 3-5 (October 2002).
  (MRSI: Material Research Society of Indian).
  

• Azher Majid Siddiqui and Sameen Ahmed KHAN,
  Accelerator-based Materials Science Programmes in India.
  (in preparation)
  

• Azher Majid Siddiqui and Sameen Ahmed Khan,
  Accelerator-Based Techniques and Applications in Research and Industry,
  (in preparation).
  

1. 26 February - 3 March 1994
   Workshop on Ion Beam Applications With Low Energy Accelerator Facility,
   Materials Science Division,
   Indira Gandhi Centre for Atomic Research,
   Kalpakkam.
   

2. 20-22 September 1995
   International Conference on Defects in Condensed Media (DCM'95),
   Materials Science Division,
   Indira Gandhi Centre for Atomic Research,
   Kalpakkam.
   

3. 30 October - 18 November 1995,
   SERC School on Computational Condensed Matter Physics,
   Department of Physics,
   Himachal Pradesh University,
   Shimla.
   

4. 20-23 August 1996
   International Conference on Frontiers in Materials Modelling and Design (MATMOD'96),
   Materials Science Division,
   Indira Gandhi Centre for Atomic Research,
   Kalpakkam.
   

5. 17-19 February 1997
   National Conference on Ion Beams in Materials Research,
   Department of Physics
   University of Pune
   PUNE
   

6. 03-17 October 1997
   SERC School on Materials for Advanced Research and Technology (SMART'97),
   Crystal Growth Centre,
   Anna University,
   Chennai (Madras).
   

7. 4-7 November 1998
   Proceedings of the
   15th International Conference On The Application Of Accelerators In Research And Industry (CAARI-1998),
   Denton, Texas, USA,
   Poster (Proxy): .
   

8. 5-7 March 1999
   Seminar on Semiconductor Physics and Devices,
   School of Physics
   University of Hyderabad
   Hyderabad.
   

9. 15-17 December 1999.
   8th National Laser Symposium (NLS99),
   Held at:
   School of Physics
   University of Hyderabad
   Hyderabad, India.
   

10. 03-04 April 2000
    Workshop on Interface Engineering by Energetic Heavy Ions,
    Physics Department
    Indian Institute of Technology (IIT)
    KANPUR
    

11. 1-5 November 2000
    Sixteenth International Conference On The Application Of Accelerators In Research And Industry (CAARI-2000),
    Denton, Texas, USA,
    Poster (Proxy): .
    

12. 18-22 December 2000
    XIV DAE Symposium on High Energy Physics,
    Held at:
    School of Physics
    University of Hyderabad
    Hyderabad, India.
    

13. 29 July - 03 August 2001
    19th International Conference on Atomic Collisions in Solids,
    Laboratoire des Collissions Atomique et Moleculaires, Universite Paris Sud, bat, 351, Orsay, France.
    Poster (Proxy): .
    

14. 23-24 August 2001
    Young Physicists Colloquium,
    Organized by:
    The Indian Physical Society (IPS), Kolkata (Calcutta), India,
    Talk: .
    

15. 26-30 December 2001
    44th DAE Solid State Physics Symposium (DAE SSPS'2001)
    Bhabha Atomic Research Centre (BARC)
    MUMBAI (BOMBAY)
    Poster: .
    

16. 19-24 January 2003
    20th International Conference on Atomic Collisions in Solids
    PURI 752002
    Poster: .
    Talk: .
    

17. 2-6 November 2004
    The International Workshop Charged and Neutral Particles Channeling Phenomena Channeling 2004
    Istituto Nazionale di Fisica Nucleare (INFN)
    Laboratori Nazionale di Frascati
    Frascati (Roma) Italy.
    Talk: .
    

18. 23-24 November 2004
    The National Seminar on Physics of Materials
    Department of Physics
    University of Jammu
    Jammu
    Talk: .
    

19. 19-20 March 2008
    National Conference on Physics of Materials
    Department of Physics
    Pondicherry University
    Puducherry
    Pondicherry
    Talk: .
    

20. 
    Talk: .
    

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© Last updated Friday, the 03 October 2008