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  Laser Molecular Beam Epitaxy (Laser-MBE)[1] inherits from Pulsed Laser Deposition (PLD) and conventional Molecular Beam Epitaxy (MBE).
    Laser-MBE is designed especially for high melting point oxide with complex chemical structure and multi-elements.

[1] H. Koinuma, et al.Appl.Phys.Lett.58, 771(1991);M. Kawasaki, et al. Science 266, 1540(1994).
 lmbe.jpg (29408 bytes)
lmbe_eqv.jpg (26170 bytes)     This Laser-MBE system is designed by our group and made in China. More than three Chinese patents are used. Reflectance High Energy Electron Diffraction (RHEED) and other in-situ techniques are adapted for real-time control and growth mechanism study. Good RHEED intensity oscillations and almost perfect HRTEM pictures are obtained. 
    We adapt optical oblique-incidence reflectivity difference (OIRD)technique [2] to the epitaxy chambe, which provide a new method to study the oxidation reaction[3] on the substrate surfaces.

[2] X.D. Zhu et al., Phys.Rev.B 57, 2515(1998);Fan Chen et al.,Phys.Rev.B 61,10404(2000);
[3] X.D. Zhu et al.,Appl.Phys.Lett.74,3540,(1999);Fan Chen et al.,(To be published)

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