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Curriculum Vitae:
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Name:
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Fursin (Foursine) Leonid Grigorievich
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Citizenship:
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Russia
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Birthday:
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June 14, 1975 (Moscow, Russia)
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Address:
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Leonid Fursin,
Rutgers, the State University of New Jersey,
Department of Electrical and Computer Engineering
94 Brett Road, Piscataway 08854, USA
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Languages:
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Russian (native), English
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E-mail:
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furlg@iname.com
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Home page:
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http://www.oocities.org/fursinlg
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Education:
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1998-present
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Studying for Ph.D. at Rutgers University (USA), Department of Electrical and Computer Engineering, Solid State Electronics Group
Supervisor: Prof. Jian H. Zhao
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1996-1998
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M.S. in Applied Physics (Solid State Electronics) from Moscow Institute of Physics and Technology (Department of Physical and Quantum electronics);
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1992-1996
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Bachelor of Natural Sciences from Moscow Institute of Physics and Technology (Department of Physical and Quantum electronics);
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1989-1992
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Moscow Physical & Technical College (GPA=4.00/4.00)
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1982-1992
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Finished Moscow Secondary School No249 with medal
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Research & work experience:
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09/1998 - present
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Member of SiCLAB (RUTGERS, the State University of New Jersey,
Department of Electrical and Computer Engineering).
DUTIES:
theoretical analysis of high power silicon carbide device structure
and performance, photomask design, device fabrication
(wet chemical cleaning and etching, photolithography, plasma etching,
PECVD growth, deposition of thin metal film, ion-implantation,
Rapid Thermal Annealing, activation annealing), device testing
and further optimization of device performance; maintenance of
the equipment. During year 2001 I was employed as a full-time
Graduate Assistant;
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09/1998 - 12/2000
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Full-time Teaching assistant (RUTGERS, the State University of
New Jersey, Department of Electrical and Computer Engineering).
DUTIES: Taught recitation section for Electromagnetic Fields
(Spring 1999); was a lab instructor for Pulse Circuits Lab
(Spring 2000); was a lab instructor for Electronic Devices Lab
(Autumn 1998,99,2000), was appointed twice as a leading TA for
Electronic Devices Lab (specific duties included teaching
of two lab sections, organizing the lab work, training and
further supervision of new teaching assistants for that class);
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09/1995 - 08/1998
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Research engineer (Institute of Radio Engineering & Electronics
of the Russian Academy of Sciences).
DUTIES: computer simulation of electronic properties of
GaAs structures with quantum wires grown by molecular-beam
epitaxy (MBE), maintenance of MBE system;
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Awards, Nominations and Achievements:
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2001
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Nominated for the Teaching Assistant of the Year award (RUTGERS, the State University of New Jersey, Department of Electrical and Computer Engineering);
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2000
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Passed Ph.D. pre-qualifying exam (RUTGERS, the State University of New Jersey, Department of Electrical and Computer Engineering);
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1996
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SOROS Student Grant in 1996 for academic and research achievements;
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Recent publications:
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1.
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L. G. Fursin, J. H. Zhao, and M. Weiner. Nickel Ohmic Contacts to p- and n-type 4H-SiC (Electronics Letters. v 37 n 17 Aug 16 2001. p 1092-1093)
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2.
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Y. Luo, L. Fursin, J.H. Zhao, P. Alexandrov, B. Wright. All-SiC Half Bridge Inverter characterization of 4H-SiC Power BJTs Up to 400V-22A (accepted for oral presentation and proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM2001)
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3.
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X. Li, Y. Luo, L. Fursin, J.H. Zhao, M. Pan, W. Wright, M. Weiner. Design and Fabrication of 4H-SiC BJT for power invertor application (accepted for the proceedings of 4th International All Electric Combat Vehicle Conference, AECV)
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X. Li, L. Fursin, J.H. Zhao, P. Alexandrov, M. Pan, M. Weiner, T. Burke, G. Khalil. A novel High Voltage normally-off Field Gate Bipolar transistor in 4H-SiC (accepted for poster presentation and proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM2001)
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5.
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Li, X. Tone, K. Fursin, L. Zhao, J H. Burke, T. Alexandrov, P. Pan, M. Weiner, M. Multistep junction termination extension for SiC power devices. Electronics Letters. v 37 n 6 Mar 15 2001. p 392-393
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6.
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Luo, Y. Fursin, L. Zhao, J H. Demonstration of 4H-SiC power bipolar junction transistors. Electronics Letters. v 36 n 17 Aug 2000. p 1496-1497
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7.
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Fursin, L. Tone, K. Alexandrov, P. Luo, Y. Cao, L. Zhao, J. Weiner, M. Pan, M. Fabrication and characterization of 4H-SiC GTOs and diodes. Materials Science Forum. v 338 (II 2000. p 1399-1402
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8.
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Li, Xueqing. Tone, Kiyoshi. Cao, Li Hui. Alexandrov, Petre. Fursin, Leonid. Zhao, Jian H. Theoretical and experimental study of 4H-SiC junction edge termination. Materials Science Forum. v 338 (II 2000. p 1375-1378
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9.
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Senichkin, A P. Bugaev, A S. Mokerov, V G. Fursin, L G. Distribution of islets according to their sizes on the crystal surface by angular distribution of diffracted electron intensity. 1. The case of a single incomplete monolayer. Surface Investigation X-Ray, Synchrotron & Neutron Techniques. v 13 n 10 1998. p 1223-1231
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10.
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Senichkin, A P. Bugaev, A S. Mokerov, V G. Fursin, L G. Obtaining of the size distribution of islands on the crystal surface from the angular distribution of intensity of diffracted electrons. 2. The case of several unfilled monolayers. Surface Investigation X-Ray, Synchrotron & Neutron Techniques. v 15 n 8 2000. p 1235-1240
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Recent Conferences & Presentations:
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10-11/2001
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International Conference on Silicon Carbide and Related Materials, ICSCRM2001 (Poster Session) held in Tsukuba International Congress Center (Epochal Tsukuba) ú Tsukuba, Japan;
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09/2001
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4th International All Electric Combat Vehicle Conference (poster session) held at Golden Tulip Conference Hotel 'Leeuwenhorst' - Noordwijkerhout, The Netherlands;
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11/2000
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DARPA EHV and DOT AVP Joint Program Review (Poster Session) held at the Ala Moana Hotel, HI, USA;
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10/1999
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International Conference on Silicon Carbide and Related Materials, ICSCRM'99 (Poster Session) held in North Carolina State University.
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Hobbies, Interests and Sport:
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I am interested in soccer!!!!!
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Referees:
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Professor Jian H. Zhao:
Rutgers, the State University
of New Jersey, Department of Electrical and Computer Engineering
(email: jzhao@ece.rutgers.edu)
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Professor Yicheng Lu:
Rutgers, the State University
of New Jersey, Department of Electrical and Computer Engineering
(email:ylu@gandalf.rutgers.edu)
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Professor Victor A. Greenhut:
Rutgers, the State University
of New Jersey, Department of Ceramics and Materials Engineering
(email: greenhut@alumina.rutgers.edu)
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