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Journal
Publications (1)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Quantum Electron
Transport Modeling in Double-Gate MOSFETs Based on Multiband Non-Equilibrium
Green's Function Method”, Physica E (Low Dimensional Systems
& Nanostructures), Vol 40, Issue 2, pp. 245-248, Dec 2007. http://dx.doi.org/10.1016/j.physe.2007.06.036 (2)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Multiband Simulation of Nano-Scale MOSFETs Based on a
Non-Equilibrium Green’s Function Method”, IEICE Transactions on Electronics, Vol.E91-C, No.1,
pp.105-109, Jan. 2008. (3)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Quantum Electron Transport Modeling in Uniaxially Strained
Silicon Channel of Double-Gate MOSFETs”,
Physica Status Solidi (c), Vol 5, Issue 1, pp. 74-77, Jan 2008. (4)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Non-Equilibrium Green's Function Method for Modeling
Quantum Electron Transport in Nano-Scale Devices with Anisotropic Multiband
Structure”, Journal of
Materials Science: Materials in Electronics, Vol. 19, No. 2, pp. 107-110, Feb
2008. http://dx.doi.org/10.1007/s10854-007-9336-z International
Conference Proceeding Publications (1)
H. Fitriawan, M. Ogawa, and T. Miyoshi,
“Atomistic Quantum
Simulation of Nano-scale Devices Based on a Non-Equilibrium Green's Function
Method”, The 2006 International Meeting for Future
Electronic Devices Kansai (IMFEDK2006), 24-26 April 2006, Kyoto. (2)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Multiband Simulation of Quantum Electron Transport in Nano-Scale
Devices Based on Non-Equilibrium Green's Function”, 2006 International
Conference on Solid State Devices and Materials SSDM 2006,
12-15 September 2006, Pacifico Yokohama. (3)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Non-Equilibrium Green's Function Method for Modeling
Quantum Electron Transport in Nano-Scale Devices with Anisotropic Multiband
Structure”, 6th International Conference on Materials for
Microelectronics and Nanoengineering (MFMN 2006), 29-31
October 2006, (4)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Quantum Electron
Transport Modeling in Double-Gate MOSFETs Based on Multiband Non-Equilibrium
Green's Function Method”, Second International Symposium on Nanometer-Scale Quantum
Physics (nanoPHYS’07) 24-26 January 2007, Tokyo
Insititute of Technology, Tokyo. (5)
H. Imago, A. Mizutani, H. Fitriawan, M.
Ogawa, S. Souma, and T. Miyoshi, “Analysis
of quantum transport in nano-scale silicon devices including geometric
effects”, The 2007 International Meeting for Future Electronic
Devices Kansai (IMFEDK2007), 23-25 April 2007, Osaka. (6)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Quantum Electron Transport Modeling in Nano MOSFETs Including
Strain Effects”, 15th International Conference on
Nonequilibirum Carrier Dynamics in Semiconductor (HCIS15), 23-27 July 2007, (7)
H. Fitriawan, S. Souma, and M. Ogawa,
“Multiband Simulation of
Uniaxially Stressed Silicon MOSFETs Based on Non-Equilibrium Green's Function
Method”, 2007 International Conference on Solid State Devices and
Materials (SSDM 2007), 18-21 September 2007, Tsukuba,
Ibaraki. (8)
H. Fitriawan, S. Souma, and M. Ogawa,
“Fullband Green’s Function Study for
Quantum Electron Transport in Strained Silicon n-MOSFETs”,
12th International Workshop on Computational Electronics (IWCE-12),
8-10 October 2007, Massachusetts, Amherst, USA. (9)
H. Fitriawan, S. Souma, and M. Ogawa,
“ Calculation of Strain Effects
on the I-V Characteristics of Ultra Small MOSFETs Based on NEGF Approach ”,
2008
International Conference on Solid State Devices and Materials (SSDM
2008), 23-26September 2008, Tsukuba, Ibaraki. National
Conference Proceeding Publications (1)
H. Fitriawan, M. Ogawa, and T. Miyoshi,
“Nanoscale Device Simulation
Based on Tight-Binding Green's Function Method”, The 66th
Autumn Meeting 2005 The (2)
H. Fitriawan, M. Ogawa, and T. Miyoshi,
“Multiband Simulation of
Nanoscale Device Based on a Non-Equilibrium Green's Function Method”,
The 53rd Spring Meeting 2006 The (3)
N. Kagotani, H. Fitriawan, M. Ogawa, and
T. Miyoshi, “2D Quantum Transport
of Nanon-Scale MOSFET by Non-Equilibrium Green's Function (NEGF) Method”,
The 53rd Spring Meeting 2006 The (4)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Fullband
Simulation of Quantum Electron Transport in Nanoscale Devices”,
The 67th Autumn Meeting 2006 The (5)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Quantum Electron Transport Modeling in Nano-Scale Devices
Based on Multiband Non-Equilibrium Green's Funtion Method”, IEICE
Technical Committee on Silicon Device and Materials (SDM), Theme: Process,
Device, Circuit Simulation, etc, 25-26 September 2006, Tokyo. (6)
H. Fitriawan, M. Ogawa, S. Souma, and T.
Miyoshi, “Modeling of Quantum
Electron Transport in strained Double-Gate MOSFETs”, The 54th
Spring Meeting 2007 The Japan Society Applied Physics (JSAP), 27-30 March
2007, Aoyama Gakuin University, Sagamihara, Kanagawa. (7)
H. Imago, A. Mizutani, T. Shimizu, H.
Fitriawan, M. Ogawa, S. Souma, and T. Miyoshi, “Simulating Quantum Transport in Nano-Scale
Transistors”, The 54th Spring Meeting 2007 The Japan
Society Applied Physics (JSAP), 27-30 March 2007, Aoyama Gakuin
University, Sagamihara, Kanagawa. (8)
H. Fitriawan, S. Souma, and M. Ogawa, “Quantum
Electron Transport Modeling in Strained MOSFETs Based on Multiband
Non-Equilibrium Green's Function Method”, The 68th
Autumn Meeting 2007 The Japan Society Applied Physics (JSAP), 4-8 September
2007, Hokkaido Institute Technology, Sapporo,
Hokkaido. (9)
H. Fitriawan, H. Imago, S. Souma, and M.
Ogawa, “Quantum Transport Analysis of Si Nano-MOSFETs in the
Presence of Phonon Scatterings”, The 55th Spring Meeting
2007 The Japan Society Applied Physics (JSAP), 27-30 March 2008, Chiba. |
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