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Research
Topic:
Quantum
Mechanical Device Simulation Method of Nano-scale
Semiconductor Devices
The trend of semiconductor device modeling was started at 1960s, which used
drift-diffusion model to explain the understanding of the electronic
transport in conventional devices. By assuming the semiconductor band theory
and the Fermi-Dirac statistics, electrons have been
described as classical particles responding with an effective mass to the
external electric field. However, this model has failed once the device
dimensions have reached sub-micrometer region, that
is the order of 0.1 micrometer to 1 micrometer. Monte Carlo and energy transport models
turns up to describe such devices. At the 1990s, very small devices whose
dimensions are in-between the microscopic objects (like atoms) and the
macroscopic ones have begun to be produced. Nowadays, the size of a MOSFET in
an IC has become as small as 5nm, which is comparable to the wavelength of
electrons. Such devices are classified as so-called mesoscopic
devices whose characteristic dimensions are of several nanometers. The
electronic transport in these devices can be identified by assuming
additional quantum ‘skills’ for the electrons such us tunneling
or energy discretization. Only quantum mechanical
models such as the Green’s function, Wigner
function and quantum hydrodynamic models can be used to deal with the
simulation and modeling of such devices. Further efforts by introducing new
proposals and initiatives such as including precise band structures of the
materials are essential to progress the semiconductor devices development.
The simulation and modeling of semiconductor devices is an attractive challenge
from the physical as well as from the numerical point of view. New ideas and
initiatives are still needed in order to have more accurate modeling and
better understanding of physics in the nano-scale
devices. Therefore, I would like to study in this field and carry out my
research and contribute to the development and advancement of nano-scale MOSFETs as well as
quantum mechanical devices. The test device for most of this study is the deca-nano-scale MOSFET, in which quantum effects are the
highest concern, due to its dominance in electronics and to the wide range of
quantum effects that are increasingly significant in this device. Simulation
results will be analyzed in order to obtain the improved design and
performance of the devices.
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