dRs=

L / CD

=

50 / 7.492

=

6.674

riance of R due to Rs=

[(dR/dRs)*Srs]^2

=

(6.674*3.55)^2

=

561.3

/dCD

=

- Rs* L / (CD)^2

=

- (196)*(50) / (7.492)^2

=

-174.6

riance of R due to CD

=

[(dR/dCD)*Scd]^2

=

(-174.6*.371)^2

=

4195.7

riance of R

=

561.3

+

4195.7

=

4757;

ev of R

=

Sqrt (4757)

=

69.0

lative importanceof input parametersfor resistorvariability:

95.7 / 4757

⇒

88%

of resistor variance is due to CD variability

del:

Vt

=

φms (Nd)

+2 φf (Nd)

-

Qb (Nd)
Co (tox)

-

Qi
Co (tox)

ere:

φms (Nd)

=

The metal-semiconductor work function difference

φf (Nd)

=

The Fermi potential

Qb (Nd)

=

The chargeper unit area in thesurface depletion regionat inversion

Co (tox)

=

The gate oxidecapacitance per unitarea

cess Factors:

Nd

=

Thedopingconcentrationin thechannel,

tox

=

Thegateoxide thickness, and

Qi

=

Theoxide/interfacecharge perunitarea

istributions obtainedfromCV plots oftest patterncapacitors

rmalizedthresholdvoltageas a function of the nomralizedprocessing

riables:

Gate oxidethickness- - - - - - - - - -
Oxide/interface charge density __________
Concentration of dopingin the channel region • • • • • • • • • •