del:

BVCEO=

V ∞C2
4β+ 1

2WE
WCEOC

-

W
E
W
CEOC

?
?

?

?
?

2

? ?

?

? ?

?

ere:

BVCEO

=

Collector-emitterbrackdown voltage

W∞

=3.60´10? 3?

?

=60N4D
1016

V ∞? 1/ 2

ND

?

?

V∞

?
? ?

?
? ?

-3/

C

=

A semi-empirical two dimensional correction factor, between 0and 1

cess Factors:

ND

WE
β

=
=
=

The doping concentration oftheepitaxial layer(CM-3)
Intrinsic thickness of epitaxial layer (baseto subcollector)
NPN current gain

4

8

rmalizedBVceoas a function of the normalizeprocessingvariables:

• • • • • • • •
________
– – – – – –

NPN current gain (Hfe)
Intrinsic epitaxy layer thickness
Concentration of dopingin the epitaxial layer